MOSFET IRFP450B IRF450 500V 14A -N- (tháo máy)

Chi Tiết Sản Phẩm

• Danh mục: Khác / Máy Đếm Tiền
• Nhà cung cấp: linhkiendientutphcm.com
• Kho hàng: TP. Hồ Chí Minh

Mô tả Sản Phẩm

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features
14A, 500V, RDS(on) = 0.39 @VGS 10 V Low gate charge ( typical 87 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.61 -40 Units °C/W

BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 250 µA, Referenced to 25°C VDS 500 V, VGS 0 V VDS = 125°C VGS 30 V, VDS 0 V VGS -30 V, VDS V/°C µA nA

VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, 250 µA VGS 7.0 A VDS 7.0 A

Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS 25 V, VGS = 1.0 MHz pF

td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS 14 A, VGS 10 V

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS 14 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS 14 A, dIF = 100 A/µs

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature = 9.1mH, IAS = 14A, VDD 25 , Starting 25°C 3. ISD 14A, di/dt 300A/µs, VDD BVDSS, Starting 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature

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